Waxa jira saddex marxaladood oo habka kaydinta uumiga jidheed (PVD): Sii daynta qaybo ka mid ah alaabta ceeriin; Qaybaha waxaa loo raray substrate-ka; Qurubku way isku ururiyaan, nukleate, koraan oo filimaan substrate-ka.

Kaydinta uumiga kiimikaad (CVD), sida magacaba ka muuqata, waxay isticmaashaa falcelinta horudhaca gaaska si ay u sameeyaan aflaan adag iyada oo loo marayo falcelinta kiimikada atomikada iyo molecular. Waxaa xusid mudan in kaydinta uumiga kiimikaad (CVD) si weyn loogu isticmaalo semiconductor crystal epitaxy tayo sare leh iyo diyaarinta filimo kala duwan oo dahaarka ah. Tusaale ahaan, gudaha MOS FET, filimada lagu xareeyay CVD waxaa ka mid ah polycrystalline Si, SiO2, sin, iwm.