Kukho izigaba ezithathu kwinkqubo yokubekwa komphunga obonakalayo (PVD): Ukukhutshwa kwamasuntswana kwimathiriyeli ekrwada; Iincinci zihanjiswa kwi-substrate; Iincinci zidibanisa, i-nucleate, ikhule kwaye ifilimu kwi-substrate.

I-Chemical vapor deposition (CVD), njengoko igama lisitsho, isebenzisa i-gaseous precursor reactants ukwenza iifilimu eziqinileyo ngokusebenzisa i-athom kunye ne-molecular reaction reaction. Kuyafaneleka ukukhankanya ukuba i-chemical vapor deposition (CVD) isetyenziswa ngokubanzi kwi-high-quality semiconductor crystal epitaxy kunye nokulungiswa kweefilimu ezahlukeneyo zokugquma. Ngokomzekelo, kwi-MOS FET, iifilimu ezifakwe kwi-CVD ziquka i-polycrystalline Si, i-SiO2, isono, njl.