Kunezigaba ezintathu ohlelweni lokufakwa komhwamuko obonakalayo (PVD): Ukukhishwa kwezinhlayiya ezivela ezintweni ezingavuthiwe; Izinhlayiya ziyiswa ku-substrate; Izinhlayiya ziyajiya, zibe yi-nucleate, zikhule futhi ifilimu ku-substrate.

I-Chemical vapor deposition (CVD), njengoba negama lisho, isebenzisa ama-reactants precursor gaseous ukwakha amafilimu aqinile ngokusebenzisa ukusabela kwamakhemikhali e-athomu kanye namangqamuzana. Kuhle ukusho ukuthi i-chemical vapor deposition (CVD) isetshenziswa kakhulu ku-semiconductor crystal epitaxy yekhwalithi ephezulu kanye nokulungiswa kwamafilimu ahlukahlukene avikelayo. Isibonelo, ku-MOS FET, amafilimu afakwe yi-CVD afaka i-polycrystalline Si, i-SiO2, isono, njll.